Sumitomo Electric Industries: GaN Semiconductors Enable New X-Band Radars

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San Jose, CA – November 22, 2021 – Sumitomo Electric Industries, Ltd. and its group company Sumitomo Electric Device Innovations USA, Inc., a leading provider of advanced radio frequency (RF), wireless and optical communications solutions, present Sumitomo Electric’s product line of gallium nitride products ( GaN) high power for X-band radar applications for ground and on-board radars.

The new generation X-Band radars face significant challenges in terms of size, weight, power and cost (SWAP-C). Among the challenges are the RF power amplifier designs used in these radar systems. Sumitomo Electric has developed a range of high power GaN X-Band devices that enable solid state RF power amplifiers to meet the SWAP-C challenges of these new radars while improving reliability over tube amplifiers. GaN provides very high power and bandwidth which improves performance and is a proven and reliable technology for radar applications.

Sumitomo Electric remains the leader in GaN and continues to be at the forefront of innovation and technology to help customers reduce costs and improve the performance of next-generation radar systems.

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Sumitomo Electric Industries Ltd. published this content on 22 November 2021 and is solely responsible for the information it contains. Distributed by Public, unedited and unmodified, on 22 November 2021 09:53:02 UTC.


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